Miniaturized implantable sensor platform having multiple devices and sub-chips

ABSTRACT

An implantable, miniaturized platform and a method for fabricating the platform is provided, where the e platform includes a top cover plate and a bottom substrate, top cover plate including an epitaxial, Si-encased substrate and is configured to include monolithically grown devices and device contact pads, the Si-encased substrate cover plate including a gold perimeter fence deposited on its Si covered outer rim and wherein the bottom substrate is constructed of Si and includes a plurality of partial-Si-vias (PSVs), electronic integrated circuits, device pads, pad interconnects and a gold perimeter fence, wherein the device pads are aligned with a respective device contact pad on the top cover plate and includes gold bumps having a predetermined height, the top cover plate and the bottom substrate being flip-chip bonded to provide a perimeter seal and to ensure electrical connectivity between the plurality of internal devices and at least one external component.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 61/114,731, filed Nov. 14, 2008 and entitled“Integration and Passivation Methodologies for Miniaturized ImplantableSensor Platform Consisting of Multiple Devices and Sub-chips” thecontents of which are incorporated herein by reference in its entirety.

FIELD OF THE INVENTION

This invention relates generally to a biosensor platform and moreparticularly to an integrated, implantable, biosensor platform, which issealed to permit long-term operation within a physical body.

BACKGROUND OF THE INVENTION

Implantable biosensor platforms are complex miniaturized devices thatare geared to monitor the concentration of metabolites and otherbiochemicals in their immediate vicinity. One example of such abiosensor device is an implantable glucose sensor that can assist in theproper management of diseases, such as diabetes mellitus. In general,such biosensor platforms consist of many components in addition to theactual biosensing element. Such components typically include electronic,optoelectronic, micro-electromechanical (MEM), ultrasound andradiofrequency (RF) devices, which are configured for powering, signalprocessing and wireless communication operations. In the presence ofmoisture and oxygen, these components are particularly sensitive tocorrosion and therefore should be packaged in such a way that they areimpervious to their environmental elements, such as gases and bodyfluids. On the other hand, current electrochemical sensing element (orelements) must be in direct contact with biological fluids in order toestablish operable functionality. However, in the case of extrememiniaturization, such dual environmental requirements present majorfabrication issues. To complicate matters, a variety of temperature andenvironmentally-sensitive biomolecules should be properly deposited onthese sensors and coated with a number of semi-permeable membranesand/or drug containing entities to help regulate analyte diffusion,provide biocompatibility, suppress inflammation and prevent fibrosis.

Current device packaging can be divided into two parts: (A) sub-chipassembly and (B) device passivation. In terms of sub-chip assembly, chipto chip interconnects are typically formed using: (i) through-Si-vias(TSVs), (ii) flip-chip thermo-compression and thermosonic bonding, and(iii) wire bonding in either flat or wrap-around configurations. Interms of device passivation, techniques like (i) polymer encapsulation,(ii) thermo-compression molding, and (iii) sputtering or chemical vapordeposition (CVD) growth of a variety of insulating organic and inorganicmaterials have been employed. Unfortunately, these techniques fail toattain the required passivation needed for devices with theaforementioned dual environmental requirements, particularly when theyreach extreme miniaturization and prolonged exposure to body fluids.

For example, referring to FIG. 1 a schematic block diagram of an IC chip300 having device packaging in accordance with the prior art isillustrated and shows a variety of interconnects along with athrough-Si-via (TSV) and flip-chip bonding of two individual IC wafers.In this case, two Si wafers (1) and (2) with their respective devices(3) and (4) are shown as being electrically connected via theirinterconnects (6) and (8), respectively, where the electrical connectionis achieved through flip-chip bonding via a bonding layer (12). Theinterconnects (6) and (8) are shown as being isolated by host oxidelayers (5). A TSV (10), which is isolated from the top wafer (2) byinsulators (7) and (9), electrically connects the back side metal layer(11) to the top wafer interconnect layer (8). Such a conventionalthrough-Si-via (TSV) requires the formation of a hole through the entiretop wafer. This is undesirable because such holes, despite their metalfilling, make this packaging prone to a variety of leakages should thiswafer be exposed to a corrosive environment.

SUMMARY OF THE INVENTION

A device platform is provided and includes at least one internalcomponent, wherein the device platform is configured to isolate the atleast one internal component from an environment external to the deviceplatform while providing for electrical connectivity to at least oneexternal component externally located on the outer surface of the deviceplatform. The device platform also includes an enclosure, the enclosureincluding a top cover plate and a bottom substrate configured to definea sealed enclosure cavity for containing the at least one component,wherein the top cover plate is configured to allow reception andtransmission of electromagnetic radiation, the surface of the top coverplate adjacent the enclosure cavity being covered with an epitaxial Sifilm in intimate cohesion, and wherein the bottom substrate isconstructed of a high resistivity Si having a Si substrate materialconductivity and includes at least one partial Si via (PSV), wherein theat least one partial Si via (PSV) is configured to electrically connectthe at least one internal component with the at least one externalcomponent, and wherein the partial Si via (PSV) is formed by introducinga dopant with the Si material, wherein the combination of the dopant andthe Si material results in at least one of a reduced conductivity and aconductivity that is opposite to that of the Si substrate materialconductivity, and wherein an outer perimeter of each of the surface ofthe top cover plate adjacent the enclosure cavity and a surface of thebottom substrate adjacent the enclosure cavity includes a continuousgold fence cohesively bonded to its respective Si surface, wherein thetop cover plate and the bottom substrate are configured such that theenclosure cavity is sealed using a gold-to-gold bond.

A method for integrating a plurality of device into a device platform isprovided and includes forming the device platform using a top coverplate and a bottom substrate separated by at least one Si spacer,wherein the device platform defines a device cavity and the top coverplate is configured to allow electromagnetic radiation to be transmittedthrough the top cover plate, wherein a portion of the top cover plateincludes an epitaxial Si film constructed from at least one ofSi-on-Sapphire and Si-on-Quartz, patterning and depositing a gold filmon the epitaxial Si film to create a Si—Au eutectic perimeter fence, atleast one interconnect, at least one contact pad and at least onemounting pad for securing and interconnecting at least one internalcomponent located within the device cavity, the at least one internalcomponent including at least one of a photovoltaic cell and aphotodetector, wherein the bottom substrate is constructed of a highresistivity Si substrate material, wherein the bottom substrate includesa signal processing device and a light emitting diode serving as anoptical transmitter, wherein the bottom substrate includes bonding padsand interconnects deposited on a patterned insulating layer of grown ordeposited oxide, wherein the bottom substrate has a plurality of partialSi vias (PSV) for electrically connecting at least one of the internalcomponents with at least one device located on an outer surface of thebottom substrate, wherein the plurality of partial Si vias (PSVs) areelectrically isolated from each other and are formed by introducing adopant having an opposite conductivity to that of the high resistivitySi substrate, wherein the bottom substrate hosts a plurality of bottomsubstrate pads and the cover plate host a plurality of cover plate pads,wherein the bottom substrate pads and the cover plate pads are alignedwith each other and include gold bumps of varying height to permitconnectivity between components located on the cover plate and thesignal processing device and the light emitting diode, wherein the Siside of the cover plate, top and bottom surfaces of the at least one Sispacer and a top side of the bottom substrate are deposited with acontinuous gold fence on an outer perimeter, wherein one side of thegold fence is bonded to a Si surface forming a gold-Si eutectic mixtureand wherein an opposing side of the gold fence is bonded to a like goldfence using a gold-to-gold bond to seal the device platform,

A miniaturized device platform is provided and includes a firstsubstrate and a second substrate configured to form an enclosure, thesecond substrate being constructed from a high-resistivity semiconductormaterial, wherein the miniaturized device platform is immersed in acorrosive and high temperature external environment, the enclosurehousing a plurality of internal components and being configured toisolate the plurality of components from the external environment, theminiaturized device platform configured to allow reception andtransmission of electromagnetic radiation through at least one of thefirst substrate and the second substrate, wherein the enclosure includesa plurality of partial-semiconductor-vias (PSVs) configured toelectrically connect at least one of the plurality of internalcomponents with an external component, wherein thepartial-semiconductor-vias (PSemVs) are constructed on a thinned sectionof the second substrate and are created by introducing an impurity tothe second substrate, the combination of the second substrate and theimpurity configured to provide electrical conductivity, wherein thefirst substrate and the second substrate are cohesively sealed using acombination of at least one of an epitaxial interface, a eutecticmixture, a metal silicide, and a metal to metal bond.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view of an integrated circuit (IC)illustrating the device packaging in accordance with the prior art,where the IC includes a variety of interconnects via through-Si-via(TSV) and flip-chip bonding of two individual IC wafers.

FIG. 2 is a cross-sectional view of a typical sub-chip enclosure inaccordance with the prior art where the electrical interconnects havebeen achieved using through-Si-vias (TSVs).

FIG. 3A is a schematic block diagram of a hermetically sealed enclosureincorporating partial-Si-vias (PSVs) along with epitaxialSi-on-insulator cover, Au/Si eutectic interfaces and Au—Au seals inaccordance with the present invention.

FIG. 3B is a block diagram illustrating a method for creating theenclosure of FIG. 3A.

FIG. 4 is a schematic block diagram of the bottom wafer of thehermetically sealed enclosure of FIG. 3 showing the electrical isolationbetween adjacent partial-Si-vias (PSVs).

FIG. 5A is a schematic block diagram of a biosensor platform inaccordance with one embodiment of the present invention illustrating theuse of wire bonding to integrate various sub-chips within a hermeticallysealed enclosure.

FIG. 5E is a schematic block diagram illustrating a method for creatingthe enclosure of FIGS. 5 a-5 d.

FIG. 6 is a schematic block diagram of a biosensor platform inaccordance with one embodiment of the present invention using flip-chipbonding to integrate various sub-chips within a hermetically sealedenclosure.

FIG. 7 is a schematic block diagram of a biosensor platform inaccordance with one embodiment of the present invention using analternate flip-chip bonding procedure to integrate various sub-chipswithin a hermetically sealed enclosure.

FIG. 8 is a schematic block diagram illustrating the bonding andinterconnecting of a prefabricated, biosensor-containing wafer onto theintegrated and hermetically sealed enclosure.

FIG. 9 is a schematic block diagram illustrating an alternativemethodology to attain transparent glass covers with patterned Si films.

DETAILED DESCRIPTION OF THE INVENTION

In accordance with an exemplary embodiment of the present invention, aminiaturized, implantable, biosensor platform along with a methodologyfor implementing the miniaturized, implantable biosensor platform isprovided. It should be appreciated that the biosensor platform mayinclude at least one electrochemical biosensor that may be exposed tobody fluids, as well as one or more sub-components that need to behermetically sealed. Accordingly, depending on the application it iscontemplated that some components and/or sub-components of the platformmay need to be sealed, while other components and/or sub-components mayneed to be exposed. For example, when configured for use as a glucosemonitor, the sensing elements need to be exposed, while the processingdevices should be sealed. It is contemplated that these sub-componentsmay come in individual sub-chips that may include electronic andoptoelectronic devices as well as integrated circuits (ICs). One or moreof these sub-components may interface with the electrochemicalbiosensors and may be configured to process their signals by convertingthem into a form that can be wirelessly transmitted via optical,ultrasound and/or radio frequency (RF) waves to an external unit. Inaddition, a variety of powering devices may be included with thesesub-components and may include, but are not limited to, photovoltaic(PV) solar cells, RF receivers, biofuel cells, etc.

In accordance with an exemplary embodiment, the biosensor may contain amultiplicity of two-terminal and/or three-terminal electrochemicalsensors configured to detect glucose and/or other metabolite sensors(such as Lactate, oxygen, carbon dioxide, dopamine, glutamate, etc.).However, it should be appreciated that only one electrochemical sensormay be used if desired. Additionally, programmable potentiostatcircuitry as well as various signal processing circuitry (such asanalog-to-digital circuitry (ADC)) may be also included, where theprogrammable potentiostat circuitry may be used to drive theelectrochemical sensors and may be configured to interface with thevarious signal processing circuitry. It is contemplated that the varioussignal processing circuitry may be integrated with existing devices orthey may be provided in a separate IC chip. Additionally, the poweringsource for this miniaturized implantable biosensor may be based on PVsolar cells, which may be integrated with existing IC's or which may berealized via a separate IC chip. This separate IC chip may also includeone or more photodetectors to receive external commands in the form ofoptical radiation of various and different wavelengths, wherein thewavelengths may or may not be adjustable as desired. Wirelesscommunication may be realized using a light emitting diode (LED) orlaser that is interfaced with the signal processing chip. It should beappreciated that although a light emitting diode (LED) or laser isdisclosed herein with regards to realizing the wireless communication,any RF frequency suitable to the desired end purpose may be used.

Moreover, due to the corrosive nature of body fluids, these sub-chipsshould be hermetically packaged within a miniaturized enclosure (whichmay also be sealed), which is in operable electrical communication withthe subcutaneous, body-fluid-immersed electrochemical sensing element.In accordance with the invention, such packaging methodology providesfor a biosensor platform that is robust enough to exclude oxygen andbody fluids from its internal cavity for extended periods of time (i.e.few months to few years). Moreover, the invention provides for abiosensor platform that may be extremely miniaturized so that it fitswithin the bore of a small diameter needle to minimize tissue damagewhen being inserted into a body.

Referring to FIG. 2, a cross-sectional schematic of a typical enclosure400 in accordance with the prior art is illustrated where variouscomponents (25) of a sensor platform are housed within a sealed cavity(24), wherein the enclosure 200 includes at least one sensor terminal(26) (shown herein as having three (3) sensor terminals (26)). Thecavity (24) of the enclosure 200 may be created by sandwiching at leastone spacer (22) between a transparent top cover (21) and a bottom wafer(20) with a seal (27) between the spacers (22) and the transparent topcover (21) and the bottom wafer (20). The electrical connection from theinside of the enclosure 200 to the three sensor terminals (26) may beaccomplished via three through-Si-vias (TSVs) (23) where the spacebetween the TSVs (23) and the bottom wafer (20) are sealed. However,using current sealing techniques, the seals (27) and TSVs (23) ofenclosure 200 are typically prone to leakage in harsh environments, suchas during prolonged exposure to body fluids. The exploded view B of theTSVs (23) and sensor terminal (26) shown in FIG. 2 illustrates threepossible leakage pathways associated with the TSVs, i.e. pin-holeleakage (28), as well as interface delamination (29) involving thesensor terminal (26) and/or the TSV isolation (9) along with pin-holeleakage (30) from the TSV isolation (9).

In accordance with the present invention, packaging having the desiredbody-fluid resistance characteristics may be accomplished by integratingsome or all of the following features into the enclosure 400 of FIG. 2.Referring to FIG. 3, an enclosure 500 which integrates the featuresdiscussed hereinafter is illustrated in accordance with one embodimentof the present invention, where the features may include, i) eliminatingdelaminating interfaces, ii) increasing interfacial adhesion, and/oriii) eliminating through-Si-vias (TSVs) interconnects at the bottom sideof the enclosure. Regarding the elimination of delaminating interfaces,prolonged exposure of layered structures to moisture and/or corrosiveliquids typically results in delamination. One approach to resolve thisissue involves using epitaxially grown layers (32) between twostructures where little or no strain or interfacial voids can be foundbetween the two structures. For example, interfaces between epitaxiallygrown Si on sapphire (SOS) and Si on quartz are of high integrity. Thisallows transparent top cover (21) to be integrated with a Si film, wherethe Si film can have its native SiO₂ removed from its exposed face (forexample, using an HF treatment) to yield a SiO₂-free Si film (31).

Regarding the increase of interfacial adhesion, typically prolongedexposure of metal-semiconductor and metal-insulator interfaces tomoisture and/or corrosive liquids are also prone to delamination.However, annealing evaporated Au films (33) on SiO₂-free Si film (31)and/or Si substrates (22) and (20) above about 363° C. in a reducingatmosphere (about 5% forming gas) followed by a gradual cooling to roomtemperature, forms a Au—Si eutectic mixture (34) having superioradhesion qualities. Such alloy provides a natural transition between theSi substrate and the gold deposit that is used later on to hermeticallyseal the structure using Au—Au seals (37), which may be attained bythermo-compression and/or thermo-sonic bonding techniques. In oneembodiment, it is contemplated that the spacer (22) may have a plurality(such as two) Au/Si eutectic perimeter seals which may be mirrored onthe top cover (21) and bottom substrate (20). In still anotherembodiment, the spacer (22) can be replaced by a gold preform orpatterned foil.

Lastly, regarding the elimination of through-Si-vias (TSVs)interconnects at the bottom side of the enclosure 500, TSVs aresusceptible to delamination, as well as the presence of micro-cracks andpinholes through the supporting substrate (i.e. the bottom substrate(20)). In order to achieve electrical interconnects across the bottomsubstrate, partial-silicon-vias (PSVs) (36) may be formed by theselective diffusion of a dopant impurity at a specified location. Sincedopant diffusion requires long times to take place over a thicksubstrate, a partial etching (35) may be performed to make it practical.Typically, n-type impurities are diffused across a high resistivity p⁻Si wafer, using patterned SiO₂ mask. The resultant n-type diffusedregion is surrounded by p⁻-type Si, which results in a naturalelectrical isolation between adjacent PSV interconnects. It should beappreciated that similar results may be obtained with diffusing p-typeimpurities on n-type high resistivity substrates. In an alternativeembodiment, ion implanting of n-type impurities in p-substrate andsubsequent thermal annealing to remove the lattice damage may also beused to achieve the desired PSVs. In another embodiment, PSV can beformed in a number of semiconductor substrates other than Si. These aretermed as partial-semiconductor-vias (PSemVs). For example,semiconductor substrates like Ge, ZnSe, ZnS, SiC, etc. can be used forthe formation of PSemVs.

Referring to FIG. 3B, a block diagram illustrating a method 510 forcreating the enclosure 500 of FIG. 3A is provided in accordance with thepresent invention. Regarding the cover plate, the method 510 includescleaning a single crystal sapphire substrate (which can be used astransparent top cover (21)) with an epitaxially grown Si layer (31)having a thickness of about 0.01 microns to about 50 microns (and morespecifically, of about 0.1 microns to about 1 micron and more optimallyof about 0.3 microns to about 0.5 microns), and having a robustSi-sapphire interface (32), as shown in operational block 512. Thecleaned single crystal sapphire substrate (21) is patterned down to thelevel of sapphire to create a Si perimeter fence base, as shown inoperational block 514. The method 510 includes etching any native SiO₂oxide from the top of the Si perimeter fence base, as shown inoperational block 516, and pattern depositing a gold film of about 0.5microns in thickness, as shown in operational block 518. The sapphirecover plate (21) is annealed at between about 375° C. to about 400° C.in a forming gas atmosphere (for example, about 5-15% H₂ with thebalance of N₂) followed by a cooling to room temperature to form a Au—Sieutectic mixture (34) possessing superior adhesion quality at the Au—Siinterface, as shown in operational block 520. It should be appreciatedthat, if desired the gold film may be built up with additional goldlayers using a variety of deposition processes such as electrochemicalor electroless plating, evaporation or sputtering of Au followed bypatterning, screen or ink-jet printing of gold nanoparticles, etc. Ifadditional layers are built up, then a heat treatment step may berequired to consolidate the Au deposit and remove any organics.

Regarding the high resistivity Si substrate, the method 510 includesetching a Si substrate having a resistivity in the range of about 10,000Ω·cm, (preferably about 30,000 Ω·cm and more preferably about 60,000Ω·cm), with either p-type or n-type doping, from one side to createetched regions (35) leaving a thin section of Si with remainingthickness in the order of about 1 micron to about 100 microns(preferably about 5 microns to about 50 microns and more preferablyabout 20 microns to about 30 microns), as shown in operational block522. The method 510 includes depositing an insulator film, such asthermally grown or physically deposited SiO₂, on both sides of the Sisubstrate (not shown in FIG. 3), as shown in operational block 524. Themethod 510 further includes patterning and etching the SiO₂ film in theetched-side or the planar side to open windows for the introduction ofdesired dopant impurities to form electrically conductingpartial-Si-vias (PSVs), as shown in operational block 526, andintroducing dopant impurities to form PSVs, as shown in operationalblock 528. It should be appreciated that the dopant impurities may beintroduced using any method suitable to the desired end purpose. Forexample, one method of introducing the dopant impurities involves usinga diffusion furnace operating at about 1,000° C. to create PSVs (36).The duration of this introduction is commensurate to the aforementionedthickness of the thin Si section. Another method for PSV formationinvolves ion implantation followed by a heat treatment to remove thelattice damage. In the case of ion implantation, the deposited dopantimpurities could be driven to higher depths using a high temperature(about 1,000° C. to about 1,100° C.) treatment. It should be furtherappreciated that the type of dopant may be chosen to be of oppositeconductivity to that of the high resistivity Si substrate. For example,n-type phosphorous impurity diffusion is performed for p-type highresistivity Si substrates. In the case of n-type high resistivity Sisubstrates, diffusion of boron p-type impurity is performed.

The method 510 includes depositing a patterned gold perimeter fence (33)onto an SiO2-free region, as shown in operational block 530, which maybe created by buffered oxide etching on the covering oxide layer of thehigh resistivity Si substrate (20), and annealing the gold perimeterfence in forming gas (as discussed above) to form the Au—Si eutecticinterface (34), as shown in operational block 532, where the gold layer(33) can be built up to a desired thickness as discussed hereinabove.The method 510 also includes forming bonding pads (26) on one or bothsides of the PSVs (36) (here only the bonding pad (26) on the planarside of the high resistivity Si substrate is shown), as shown inoperational block 534. This may be accomplished by depositing apatterned Au film onto SiO₂-free PSV region as well as the SiO₂-coveredportions, the latter of which may permit formation of interconnects. Itshould be appreciated that similarly to the perimeter fence discussedhereinabove, an annealing step in forming gas may allow the formation ofohmic contact with the PSVs. In case of n-diffused PSV regions, the goldcontaining trace amounts of antimony or arsenic can be used to ensurelow resistivity PSV contacts.

Regarding the Si frame (22), the Si frame (22) may be created via avariety of cutting and/or etching tools as desired, such as lasermachining, deep-reactive ion etching, chemical etching, ion-beammilling, ultra-sonic grinding, etc. The method 510 also includesremoving the native SiO₂ layer on the top and bottom surfaces of the Siframe (22) and depositing gold films (33) on both sides with patternssimilar to those used for fence formation on the cover plate (50) andhigh resistivity Si substrate (20), as shown in operational block 536.The method 510 further includes creating the Au—Si eutectic interfaces(34) via a heat treatment in forming gas, as shown in operational block538. The method also includes aligning and sandwiching the Si frame (22)between the cover plate (21) and high resistivity Si substrate (20) andsubjecting the combination to thermocompression or thermosonic bondingto form a hermetic Au—Au seal, as shown in operational block 540. Itshould be appreciated that such a procedure can take place in a varietyof combinations as desired. For example, the cover plate (21) may firstbe bonded with the Si frame (22), and the high resistivity Si substrate(20) may then be bonded afterwards or vice versa.

Referring to FIG. 4, one technique for achieving additional isolationcharacteristics (i.e. to eliminate possible electrical cross talk shownin (40)) between adjacent PSVs (36) is illustrated and includes using anappropriate mask (41), where oxygen implantation followed by annealingresults in the formation of box oxide (42) around the PSVs (36). Itshould be appreciated that since the ion implantation typicallypenetrates over a couple of microns, the etched region (35) should havesuch a depth that it leaves Si regions of a few micron-thin (thick) forPSV diffusion.

Referring to FIGS. 5( a)-(d), the topology of an integrated biosensorplatform having an enclosure 600 and using patterned interconnects andwire bonds, in accordance with the invention is illustrated. As shown inFIG. 5 a, the topology of cover plate (50) (i.e. transparent top cover21) is illustrated and includes, immediately around the perimeter of thecover plate (50), a perimeter Au fence (51) realized on a patterned Sifilm (52) located directly underneath (shown in FIG. 5 d). Thispatterned Si film (52) is part of (i.e. grown on epitaxially) the coverplate (50), which may be constructed from Si-on-sapphire (SOS). Thecover plate (50) includes back-illuminated solar cells (53) andphotodetector PD_(ss) (54), which may be mounted onto the SOS coverplate (50). It should be appreciated that although these devices (i.e.back-illuminated solar cells (53) and photodetector PD_(ss) (54)) may besecured to the cover plate (50) via gold pads (55) through a Si/Au/Sieutectic (shown in FIG. 5( d)), any method or materials suitable to thedesired end purpose may be used to secure these devices to the coverplate (50). It is contemplated that Mo and Moly Silicide may be used inplace of gold-Si eutectic. Moreover, since Mo to Moly bond is not as lowtemperature as gold-gold, an intermediate material that alloys with Molymay be used in place of gold. The pads (56) on solar cells (53) may bewire bonded (57) to pads (58) which may be formed on the patterned Sifilm (52) on the SOS cover plate (50). Similarly the pads (59) on thePD_(ss) photodetector (54) may also be wire bonded (60) to pads (61)similarly formed on the patterned Si film (52) on the SOS cover plate(50). It should be appreciated that pads (58) and (61) may beinterconnected to two outer left (62) and two outer right (63) pads(where gold bump (64) is formed (See FIG. 5 d)), using interconnects(65) and (66), respectively. These interconnects (65) and (66) may beformed by patterning Au deposited on either the sapphire or thepatterned Si film (52) of SOS cover plate (50).

As shown in FIG. 5E, the topology of the high-resistivity bottom Sisubstrate (70) (i.e. bottom wafer 20) is illustrated in a similarfashion to SOS cover plate (50) and may also include a perimeter Aufence (51) immediately surrounding the perimeter of the bottom Sisubstrate (70). A region (71) may be etched (See FIG. 5( d)) to form atleast one (in this case three) partial-Si-vias (PSVs) (72) inpredetermined locations also as shown by a box (73) in FIG. 5 d. Asshown, three pads (74) (one for each PSV) may be formed and connected(76) with the top contact of its respective PSV. To avoid electricalcrosstalk, the pads (74) as well as their interconnects (76) may bepatterned on a SiO₂ layer (75) formed on the Si substrate (70) (shown inFIG. 5( d)). A signal processing chip (77) may be included and may bemounted onto the Si substrate (70) using Au pads (78) (shown in FIG. 5(d)). Subsequently, wire bonds (79) may be used to connect the sensorpads (74) to their equivalent pads (80) on the signal processing chip(77). In a similar fashion, the TX_(D) LED or laser (81) may be affixedon its pad (82) and its top contact pad (83) may be wire bonded (84) toan adjacent pad (85), where the adjacent pad (85) together with pad (86)may be wire bonded (87) onto the respective pads (88) on the signalprocessing chip (77), where pad (86) is connected to TX_(D) pad (82).Interconnects (89) may be configured to join the two outer left pads(90) with the pads (91), where outer pads (90) may be wire bonded (92)to the power and ground pads (93) of the signal processing chip (77). Ina similar fashion, interconnects (94) may be configured to connect thetwo outer right pads (95) with the pads (96) which may wire bonded (97)to pads (98) on the signal processing chip (77). This affords theconnection of the PDss photodetector (54), mounted on the cover plate(50) to the signal processor unit (77) located on the Si bottomsubstrate (70). It should be appreciated that pads (90) and (95) may begold bumped (99) and thermo-compression bonded with the top cover bumps(64), along with the perimeter fence (51), as (shown in FIG. 5( d)).Referring to FIG. 5 c, the topology of the high-resistivity bottom Sisubstrate (70) from the bottom side is illustrated and shows therespective PSVs (73), also shown in FIG. 5( d), that may be connected tothree electrochemical electrodes (100) located on the bottom side of thehigh-resistivity bottom Si substrate (70).

Referring to FIG. 5E, a block diagram illustrating a method 610 forcreating the enclosure 600 of FIG. 5( d) is provided in accordance withthe present invention. Regarding the Si-on-sapphire cover plate (50),the method 610 includes depositing and patterning, on eitherpre-patterned Si regions on sapphire or Si-etched sapphire substrate ora combination of both (in FIG. 5( d) both pads and interconnects areshown to be formed onto pre-patterned Si regions), pads (62), (63),(58), (61) and (55) and interconnects (65) and (66), as shown inoperational block 612. It should be appreciated that the pads (62),(63), (58), (61) and/or (55) and interconnects (65) and (66) can be madefrom a variety of metals (gold, aluminum, copper, etc.) and/or otherconductive materials (i.e. graphene, nanotubes, heavily doped Si,conductive oxides, etc.). The method 610 further includes affixingdevices (such as solar cells (53) and photodetector (PD_(SS)) (54)) ontothe pads (55) on the cover plate (50) using any method suitable to thedesired end purpose (such as flip-chip thermocompression or thermosonicbonding), as shown in operational block 614. The method 610 furtherincludes connecting the pads on the devices (i.e. solar cells (53) andPD_(ss) (54)) to the corresponding pads on the cover plate (50), asdiscussed above and as shown in operational block 616. It iscontemplated that this may be accomplished via any method suitable asdesired, such as by wire bonding. The method 610 also includes forminggold bumps (64) onto pads (62) and (63), as shown in operational block618.

Regarding the high resistivity Si substrate (70) as shown in FIGS. 5(b)-5(d), the method 610 includes depositing and patterning pads (90),(95), (74), (91), (96), (86), (85), (82) and (78) and interconnects(65), (89) (94) and (76) onto SiO₂ covered substrate, as shown inoperational block 620. The method 610 further includes depositing theohmic contact (such as may be formed by gold silicon eutectic) on PSVs(73) from the etched side (71) and forming pads (72), as shown inoperational block 622. It should be appreciated that this may beaccomplished in accordance with the process defined hereinabove withregards to the fabrication of pads (26) in FIG. 3 and that for certainapplications, pads may be formed on oxide layer deposited on siliconhigh resistivity substrate or directly on the substrate without anyoxide underneath. The method also includes mounting the signalprocessing chip (77) onto pads (78) and TX_(D) onto pad (82), as shownin operational block 624, using any method suitable to the desired endpurpose, such as flip-chip bonding or other techniques. At this point,the method 610 may include connecting (using wire bonding or otheracceptable method) the pads on the signal processing chip (80), (93),(98) and (88) (shown in FIG. 5( b)) and TX_(D) (83) devices tocorresponding pads on the Si substrate, as described hereinabove and asshown in operational block 626, and forming gold bumps (99) having adesired height, onto pads (90) and (95).

Regarding the Si spacer frame (22), the Si frame (22) may be created asdiscussed hereinabove with regards to enclosure 500 in FIG. 3. It shouldbe appreciated that as discussed hereinabove the Si spacer (22) may bereplaced by a gold preform of similar dimensions. Accordingly, themethod 610 includes includes aligning and sandwiching the Si frame (22)between the cover plate (50) and high resistivity Si substrate (20) andsubjecting the combination to thermocompression or thermosonic bondingto form a hermetic Au—Au seal, as shown in operational block 628. Itshould be appreciated that such a procedure can take place in a varietyof combinations as desired. For example, the cover plate (50) may firstbe bonded with spacer (22), and the high resistivity Si substrate (20)may be bonded afterwards or vice versa. Here it should be noted thatsuch thermocompression or thermosonic bonding procedures not only sealthe perimeter fence but also allows Au—Au bonding between bumps (64) and(99) and may necessitate that the bump height be carefully controlled toafford internal electrical interconnection within the enclosure.

Referring to FIGS. 6 and 7, two alternate embodiments for implementingthe packaged functional devices discussed herein are provided, whereinthe packaged functional devices do not use wire bonding. FIG. 6illustrates a three-layered structure, where the top SOS cover (50) maybe used to provide interconnects (110) onto the various solar cells(111) of the solar array located within sealed cavity (104) and (105) ofenclosure 700. The interconnects (110) may be formed on patterned Si(112) of the SOS structure (50) and the solar cells (111) may be frontilluminated and front contacted and realized on a high resistivitysubstrate (113). The PD_(SS) photodetector (115) may be of similararchitecture and may also be formed on substrate (113).Thermo-compression bonding of SOS structure (50) and high resistivitysubstrate (113) may provide both solar cell interconnection as well asperimeter fence (114). It should be appreciated that solar and/orphotodetector PD_(SS) output may be provided through either PSVs or TSVs(here TSVs are shown (116) for explanation) to a distributedinterconnect (117) located at the bottom side of high resistivitysubstrate (113). The distributed interconnect (117) may be used todirect power and PD_(SS) signal to a signal processing unit (118)through any number of Au pads and bumps (119). This distributedinterconnect (117) may also be used to connect the TX_(D) LED or laser(127) that may be located on an appropriately recessed additional highresistivity substrate (125). Similarly, the distributed interconnect(117) may also be used to connect the biosensor(s) (100) to the PSVs(73) via the Au bumps and pads (120) and patterned interconnect (121).Similarly as above, thermo-compression bonding between the highresistivity substrates (113) and (125) may also provide connections forboth electrical interconnection as well as acting to seal a secondperimeter fence (126).

FIG. 7 illustrates a packaging structure 800 where the PV cell(s) (130),the TX_(D) LED or laser (131), and/or the PD_(SS) photodetector (134)are flip-chip mounted onto the SOS top cover plate (50). Subsequently,the appropriate height bumps (137) may be achieved using the respectivecontacts of the PVs (130), TX_(D) LED or laser (131), PD_(SS)photodetector (134), SOS interconnect (136) and/or the signal processingunit (118) to afford flip-chip bump-to-bump bonding and componentinterconnection. The composite assembly of SOS top cover plate (50)and/or signal processing unit (118) may be connected and sealed to anappropriately recessed high resistivity Si substrate (125) whichcontains PSVs (138), their interconnects (139), bonding pads (140),appropriate height bumps (141) and a Au/Si eutectic perimeter fence(142). In this embodiment, the height of the gold bumps (137) and (141)should be controlled to obtain an internally interconnected and sealedpackage platform. It should be appreciated that the gold bumps (137) orstuds may be of variable heights and they connect pads which are alsolocated at different heights. Also, the gold fence (51) formation andthe gold bump interconnect realization typically occur at the same time.Accordingly, the gold bumps (137) should be fairly accurate with respectto the gold fence (51).

In an additional embodiment, the SOS top cover (50) may serve as asubstrate to monolithically grow PVs (130), TX_(D) LED or laser (131),PD_(SS) photodetector (134), and/or other devices such as signalprocessing (118) devices. In this case, any or all of the above devicescan be interconnected using a distributed interconnect placed in thehigh resistivity substrate (125) in the place where the signalprocessing chip is shown in FIG. 7 (or elsewhere as desired). Thisessentially involves flip-chip bonding of two wafers. In the case of thesignal processing chip (118) being a separate unit, the integration mayresemble that of FIG. 7. In still yet another embodiment, the top cover(50) may be constructed from a wide energy gap semiconductor material,such as GaP, ZnSe, ZnS, SiC, ZnO, etc. It should be appreciated that theband gap may be relative to the powering source (solar cells) whichtypically operate in the visible range (1.8 eV for 0.7 micron redlight). For example, one acceptable band gap range may be between 1.8eV-3.7 eV. These semiconductor materials can be used in place of thesapphire cover and can be epitaxially coated with a thin layer of Si toprotect their outer surface from exposure to body fluids. Alternatively,a germanium (Ge) film can be used in place of Si, which also formseutectic alloys with gold. Still yet another embodiment involves theformation of the signal processing chip (118), partial-Si-Vias (138),pads (140), interconnects (139), and/or perimeter fence (142) onto ahigh resistivity substrate (125), where the high resistivity substrate(125) is flip-chip bonded to the cover plate (50) and hosts all (orsome) of the optical and/or optoelectronic devices.

In accordance with the present invention, subsequent to packaging theelectronic and optical components of the miniaturized implantableplatform, appropriate coatings needed for biological detection should bedeposited onto the proper components, where the coatings may typicallycontain a variety of proteins and hydrogels, which are temperaturesensitive. Referring to FIG. 8, an embodiment where the bottom side ofthe packaged platform (150) is interfaced with a prefabricated biosensor(152) onto a substrate (153) is illustrated. One way to accomplish thisconfiguration using the prefabricated biosensor (152) may involveflip-chip bonding using a cold chuck/collet (155) on the top of thepackage, and a heated chuck on the bottom (156) of the package (shown inFIG. 8A). It should be appreciated that the temperature range of thecold collet (155) may be about −80° C. to about 95° C. and morepreferably about −40° C. to about 55° C. However, an exemplarytemperature range may be about 3° C. to about 37° C. For thisconfiguration thermo-sonic bonding may be used together with gold bumped(154) TSVs (157), where another set of dummy gold bumped pads (151) maybe placed on the opposing side of the packaged platform (150) betweenthe platform (150) and the substrate (153) of the prefabricatedbiosensor (152) to provide both planarity and additional adhesion.Alternatively, an ultra-sonic wire bonding (158) approach may be usedtogether with a polymeric adhesive (159).

Referring to FIG. 9, an alternative to using epitaxial Si-on-sapphire orSi on quartz cover plates (50) is illustrated and includes using alkalior anodic bonding of a Si wafer (200), where its native oxide (201) maybe bonded to a glass substrate (202). Subsequently, following waferthinning (from the silicon side), Si patterning may permit the formationof pads (204) and a high integrity gold fence (203) as describedhereinabove and as shown in FIG. 3.

In another embodiment, the cover plate may be made of quartz and a thinfilm of patterned molybdenum (Mo) may be deposited where the perimeterseal is needed. Typically, Mo/quartz seals are known to withstand hightemperature and vacuum conditions. This Mo film may then be covered witha thin film of Si, which may be physically deposited using sputtering orsome other appropriate deposition method(s) as desired. Upon heattreatment, Mo forms MoSi, which provides superior adhesion between Siand Mo. As such, any remaining Si can be used to form an Si/Au eutecticsubstance, which can subsequently be used to form Au—Au seals. In stillyet another embodiment, the top cover plate can be achieved using apolycrystalline Si film on substrates like glass, quartz, AIN, SiC,sapphire, ZnS, ZnO, etc. It is contemplated that various types ofmaterials may be used to increase the operation temperature envelop ofthe platform to very high temperatures. These materials may includeMolybdenum (Mo), Pt, Pd, Ni, etc, all of which form silicides which forma good bond like Au—Si eutectic.

It it contemplated that the article, implementation and/or fabricationof the invention may be embodied in forms that can be used for otherapplications than those disclosed herein. For example, various computinghardware and IC chips can be packaged within such miniaturizedenclosures and directly attached onto devices that operate in a vacuum,under water, in corrosive liquids and gases, and other biological media.One such application may involve actuation of artificial muscles orvarious other microelectromechanical devices. The enclosure describedherein can easily be adapted to house miniaturized pressure transducersat the site where PSVs are formed. Here, a thin Si film can serve as adiaphragm. In one embodiment, a traditional variable capacitor pressuretransducer, a strain gauge type resistor, or a transistor element can beimplemented from the inside part of this enclosure and be protected fromthe corrosive environment. Similarly, a chem-FET device can beimplemented on the exposed site and be interconnected with thepassivated electronics through PSVs. Such devices, used in conjunctionwith remote powering and remote sensing can find a number ofapplications for nanosized robots together with diagnostic devices,smart dust sensors and satellite- or drone-operated distributed networkof sensors.

Another application may include nanosized batteries in proximity tobiological and other environments that cannot tolerate any leakage ofbattery electrolytes. Such nanosized packages incorporate batteryelectrolytes as well as cathodes and anodes within the enclosure, withthe PSVs serving as the electrical contacts to the outside world (i.e.component external to the enclosure). Similarly, these or other PSVs canserve to charge these batteries by connecting them to biological fuelcells on the outside (i.e. external to the enclosure). In addition,these batteries can be remotely charged using photovoltaics cells,thermoelectric generators, RF powering sources etc. housed inside theenclosure.

Another application for such enclosures, particularly using hightemperature materials such as MoSi, may involve situations that willexpose the platform to high temperature environments, such as jetengines, automotive catalytic convertors, rockets, geothermalexploration, space crafts, nuclear environments, etc. Here,thermoelectric, photovoltaics and/or electromechanical sources can bealso housed within the enclosure to protect them from the harmfuleffects of high temperatures and radiation. These devices can be used topower the devices within these enclosures. In still yet anotherapplication, PSV technology can be used to facilitate 3D integration ofmultiple IC chips. Here, the PSV technology is also complementary withliquid cooling using corrosive liquids like sea water.

In accordance with the present invention, the invention may beimplemented as discussed in U.S. patent application Ser. No. 11/862,866filed Sep. 27, 2007, the contents of which are incorporated herein inits entirety. For example, take the case of a glucose sensor. Asdisclosed in U.S. patent application Ser. No. 11/862,866, the integratedbiosensor platform disclosed herein may be implanted subcutaneously in asubject such that the sensor elements sense characteristics of a bodyfluid of the subject. An external control unit located external to thebody of the subject can communicate with the integrated biosensorplatform via electromagnetic signals (such as via solar cells and/orphotodetector (PD_(SS))) to transmit and receive signals to and from theintegrated biosensor platform.

The implementation and/or fabrication of the invention may be embodiedin the form of a computer or controller implemented processes, in wholeor in part. The invention may also be embodied in the form of computerprogram code containing instructions embodied in tangible media, such asfloppy diskettes, CD-ROMs, hard drives, and/or any othercomputer-readable medium, wherein when the computer program code isloaded into and executed by a computer or controller, the computer orcontroller becomes an apparatus for practicing the invention. Theinvention can also be embodied in the form of computer program code, forexample, whether stored in a storage medium, loaded into and/or executedby a computer or controller, or transmitted over some transmissionmedium, such as over electrical wiring or cabling, through fiber optics,or via electromagnetic radiation, wherein when the computer program codeis loaded into and executed by a computer or a controller, the computeror controller becomes an apparatus for practicing the invention. Whenimplemented on a general-purpose microprocessor the computer programcode segments may configure the microprocessor to create specific logiccircuits.

While the invention has been described with reference to an exemplaryembodiment, it will be understood by those skilled in the art thatvarious changes, omissions and/or additions may be made and equivalentsmay be substituted for elements thereof without departing from thespirit and scope of the invention. In addition, many modifications maybe made to adapt a particular situation or material to the teachings ofthe invention without departing from the scope thereof. Therefore, it isintended that the invention not be limited to the particular embodimentdisclosed as the best mode contemplated for carrying out this invention,but that the invention will include all embodiments falling within thescope of the appended claims. Moreover, unless specifically stated anyuse of the terms first, second, etc. do not denote any order orimportance, but rather the terms first, second, etc. are used todistinguish one element from another.

1. A device platform, which contains at least one internal component,wherein the device platform is configured to isolate the at least oneinternal component from an environment external to the device platformwhile providing for electrical connectivity to at least one externalcomponent externally located on the outer surface of the said deviceplatform, the device comprising: an enclosure, said enclosure includinga top cover plate and a bottom substrate configured to define a sealedenclosure cavity for containing the at least one component, wherein saidtop cover plate is configured to allow reception and transmission ofelectromagnetic radiation, the surface of said top cover plate adjacentsaid enclosure cavity being covered with an epitaxial Si film inintimate cohesion, and wherein said bottom substrate is constructed of ahigh resistivity Si having a Si substrate material conductivity andincludes at least one partial Si via (PSV), wherein said at least onepartial Si via (PSV) is configured to electrically connect said at leastone internal component with said at least one external component, andwherein said partial Si via (PSV) is formed by introducing a dopant withsaid Si material, wherein the combination of said dopant and said Simaterial results in at least one of a reduced conductivity and aconductivity that is opposite to that of said Si substrate materialconductivity, and wherein an outer perimeter of each of said surface ofsaid top cover plate adjacent said enclosure cavity and a surface ofsaid bottom substrate adjacent said enclosure cavity includes acontinuous gold fence cohesively bonded to its respective Si surface,wherein said top cover plate and said bottom substrate are configuredsuch that said enclosure cavity is sealed using a gold-to-gold bond. 2.The device of claim 1, wherein said at least one internal componentincludes a plurality of components, and wherein said at least oneexternal component includes a plurality of components, and wherein saidat least one partial Si via (PSV) includes a plurality of partial Sivias (PSVs), each of said plurality of partial Si vias (PSVs) beingelectrically isolated from each other and electrically connected to oneof said plurality of internal and external components.
 3. The device ofclaim 2, wherein said external component is a biosensor.
 4. The deviceof claim 3, wherein the said biosensor is selected from electrochemicalbiosensor and chemical field effect transistors (Chem-FETs).
 5. Thedevice of claim 1, wherein said device is miniaturized to fit inside ofa hypodermic needle.
 6. The device of claim 1, wherein said top coverplate is constructed from at least one of an epitaxial Si film onsapphire material, an epitaxial Si film-on-quartz material, an epitaxialGe film-on-ZnSe material, an epitaxial Si film on ZnS material and anepitaxial Si film on SiC material.
 7. The device of claim 1, whereinsaid at least one partial Si via (PSV) is formed by at least one of,diffusing n-type dopants into a p-type substrate having a highresistivity, implanting n-type dopants into a p-type substrate andperforming thermal annealing to remove lattice damage, diffusing p-typedopants into an n-type substrate having a high resistivity, implantingn-type dopants into a p-type substrate and performing thermal annealingto remove lattice damage, and diffusing p-type dopants into a p-Sisubstrate having a high resistivity, and isolating said diffused regionsby surrounding them with ion implanted box oxide.
 8. The device of claim1, wherein said partial Si vias (PSVs) are isolated from each other bysurrounding them with ion implanted box oxide.
 9. The device of claim 1,wherein said at least one internal component includes at least onephotodetector and at least one photovoltaic cell contained within saidenclosure cavity such that electromagnetic energy transmitted through atleast one predetermined region of said top cover plate is incident uponsaid at least one photodetector and at least one photovoltaic cell,wherein said epitaxial Si film may be removed to enhance radiationtransmission through said predetermined regions.
 10. The device of claim9, wherein said at least one component further includes a signalprocessing device, wherein said signal processing device is connectedwith said at least one photovoltaic cell using at least two photovoltaiccell interconnects and wherein said signal processing device isconnected with said at least one photodetector using at least twophotodetector interconnects, wherein said photovoltaic cellinterconnects and said photodetector interconnects are created bypatterning said epitaxial Si film on said surface of said top coverplate within said enclosure cavity, where said photovoltaic cellinterconnects and said photodetector interconnects are constructed froma material having low electrical resistivity.
 11. The device of claim10, wherein said at least one photovoltaic cell interconnect and said atleast one photodetector interconnect are constructed from at least oneof gold, silver, aluminum, palladium, platinum and copper.
 12. Thedevice of claim 1, wherein said enclosure further includes at least oneSi spacer located between said top cover plate and said bottom substrateto define a sealed enclosure cavity for containing the at least onecomponent, wherein the outer perimeter of said at least one spacer alsoincludes a continuous gold fence bonded cohesively to its respective Sisurface and wherein when said at least one Si spacer, said top coverplate and said bottom substrate form said enclosure cavity, saidcontinuous gold fence on said top cover plate is gold-to-gold bonded tosaid continuous gold fence on said top surface of said at least onespacer and said continuous gold fence on said bottom substrate is bondedto said continuous gold fence on said bottom surface of said at leastone spacer to seal said enclosure cavity.
 13. The device of claim 12where the said spacer is a patterned gold perform with similardimensions as the gold fence.
 14. The device of claim 1 wherein saidcohesive bonding is achieved by the formation Au—Si eutectic.
 15. Thedevice of claim 1, wherein cohesively bonding between Si and gold isachieved by the formation of a silicide.
 16. The device of claim 15,wherein said silicide includes at least one of Molybdenum, Palladium,Platinum, Titanium, and Nickel.
 17. The device of claim 1, wherein saidtop cover plate includes a polycrystalline Si film on a substrate whichincludes at least one of glass, quartz, AlN, SiC, sapphire, ZnS ZnSe,and ZnO.
 18. The device of claim 1, wherein said top cover plate isconstructed from a glass substrate and a Si wafer, where said glasssubstrate is bonded to said Si wafer, wherein said Si wafer is thinned.19. A method for integrating a plurality of device into a deviceplatform, the method comprising: forming the device platform using a topcover plate and a bottom substrate separated by at least one Si spacer,wherein said device platform defines a device cavity and said top coverplate is configured to allow electromagnetic radiation to be transmittedthrough said top cover plate, wherein a portion of said top cover plateincludes an epitaxial Si film constructed from at least one ofSi-on-Sapphire and Si-on-Quartz; patterning and depositing a gold filmon said epitaxial Si film to create a Si—Au eutectic perimeter fence, atleast one interconnect, at least one contact pad and at least onemounting pad for securing and interconnecting at least one internalcomponent located within said device cavity, said at least one internalcomponent including at least one of a photovoltaic cell and aphotodetector, wherein said bottom substrate is constructed of a highresistivity Si substrate material, wherein said bottom substrateincludes a signal processing device and a light emitting diode servingas an optical transmitter, wherein said bottom substrate includesbonding pads and interconnects deposited on a patterned insulating layerof grown or deposited oxide, wherein said bottom substrate has aplurality of partial Si vias (PSV) for electrically connecting at leastone of said internal components with at least one device located on anouter surface of the bottom substrate, wherein said plurality of partialSi vias (PSVs) are electrically isolated from each other and are formedby introducing a dopant having an opposite conductivity to that of saidhigh resistivity Si substrate, wherein said bottom substrate hosts aplurality of bottom substrate pads and said cover plate host a pluralityof cover plate pads, wherein said bottom substrate pads and said coverplate pads are aligned with each other and include gold bumps of varyingheight to permit connectivity between components located on the coverplate and said signal processing device and said light emitting diode,wherein the Si side of said cover plate, top and bottom surfaces of saidat least one Si spacer and a top side of said bottom substrate aredeposited with a continuous gold fence on an outer perimeter, whereinone side of said gold fence is bonded to a Si surface forming a gold-Sieutectic mixture and wherein an opposing side of said gold fence isbonded to a like gold fence using a gold-to-gold bond to seal saiddevice platform.
 20. The method of claim 19, wherein said gold-to-goldbonding between said gold fences also enable the formation of respectivegold bump to gold bump bonding to provide electrical connectivitybetween said components located on said cover plate and said componentslocated on the bottom substrate.
 21. The method of claim 19, wherein thesaid device platform is sealed such as to protect internal componentfrom long-term exposure to moisture, oxygen, body fluids and corrosiveenvironments.
 22. The method of claim 19, wherein the said devicelocated on an outer surface is comprised of a list of a biosensor,chemical sensor, nuclear radiation detecting sensor, temperature sensor,and pressure sensor.
 23. The method of claim 19, where the saidgold-to-gold bonding is performed using flip-chip thermocompression andthermosonic bonding techniques.
 24. The method of claim 19, where atleast one interconnect is realized by a wire bond.
 25. The method ofclaim 19, wherein said top cover plate is constructed from at least oneof an epitaxial Si film on sapphire material, an epitaxial Sifilm-on-quartz material, an epitaxial Ge film-on-ZnSe material, anepitaxial Si film on ZnS material and an epitaxial Si film on SiCmaterial.
 26. The method of claim 19, wherein said partial Si vias(PSVs) are formed in said high resistivity bottom substrate using atleast one of, diffusing n-type dopants into a p-type substrate having ahigh resistivity, implanting n-type dopants into a p-type substrate andperforming thermal annealing to remove lattice damage, diffusing p-typedopants into an n-type substrate having a high resistivity, andimplanting n-type dopants into a p-type substrate and performing thermalannealing to remove lattice damage, and diffusing p-type dopants into ap-Si substrate having a high resistivity, and isolating said diffusedregions by surrounding them with ion implanted box oxide.
 27. The methodof claim 19, wherein said spacer is cohesively bonded with said topcover plate and said bottom Si substrate using a silicide.
 28. Themethod of claim 27, wherein said silicide includes at least one ofPalladium, Platinum Titanium, and Nickel.
 29. The method of claim 19,wherein said gold bumps on said plurality of pads are constructed fromat least of indium, indium alloys, tin and silver, and wherein said goldbumps are of varying height to permit connectivity between saidpartial-Si-vias (PSVs), said at least one component and said signalprocessing device.
 30. The method of claim 19, wherein the saidphotovoltaic cells, photodetectors, and light emitting devices aremonolithically grown on the said epitaxial Si film on the top coverplate.
 31. The method of claim 19, wherein the said signal processingdevice is monolithically grown on the said high resistivity Si bottomsubstrate.
 32. The method of claim 19, wherein the said spacer isanother high resistivity substrate, said spacer substrate has aperimeter fence on either sides, said spacer substrate containspartial-Si-vias, through-Si-vias (TSVs), etched holes, electronic andoptoelectronic internal components, interconnects pads, wire bonds andmounting pads for securing various internal components.
 33. Aminiaturized device platform, the miniaturized device platformcomprising: a first substrate and a second substrate configured to forman enclosure, said second substrate being constructed from ahigh-resistivity semiconductor material, wherein the miniaturized deviceplatform is immersed in a corrosive and high temperature externalenvironment, said enclosure housing a plurality of internal componentsand being configured to isolate said plurality of components from saidexternal environment, said miniaturized device platform configured toallow reception and transmission of electromagnetic radiation through atleast one of said first substrate and said second substrate, whereinsaid enclosure includes a plurality of partial-semiconductor-vias (PSVs)configured to electrically connect at least one of said plurality ofinternal components with an external component, wherein saidpartial-semiconductor-vias (PSemVs) are constructed on a thinned sectionof said second substrate and are created by introducing an impurity tosaid second substrate, the combination of said second substrate and saidimpurity configured to provide electrical conductivity, wherein saidfirst substrate and said second substrate are cohesively sealed using acombination of at least one of an epitaxial interface, a eutecticmixture, a metal silicide, and a metal to metal bond.
 34. Theminiaturized device platform of claim 33, wherein said plurality ofinternal components includes at least one of an electronic device, anoptoelectronic device, an integrated circuit device, a battery,micromechanical device, an ultrasound device, and a thermoelectricdevice
 35. The miniaturized device platform of claim 33, wherein saidoutside components are comprised of a list of a biosensor, chemicalsensor, nuclear radiation detecting sensor, temperature sensor, andpressure sensor.
 36. The miniaturized device platform of claim 33,wherein said outside components are comprised of a list of a powergenerating devices selected of a list of biofuel cell, fuel cell,battery, thermoelectric generator, micro-electromechanical energygenerators.
 37. The miniaturized device platform of claim 33, whereinthe said reception and transmission of electromagnetic radiation throughone of its substrates establishes at least one wireless link with acentral control unit.
 38. The miniaturized device platform of claim 37,wherein said at least one wireless link includes repeated wireless linkswith multiple miniaturized device platforms to collectively establish anetwork of miniaturized device platforms, said network of miniaturizeddevice platforms providing environmental information at differentlocations.